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| TQM 7M4014 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Package Outline: Description: Advanced quad-band, compact 3V power amplifier module designed for mobile handset applications. The small size and high performance is achieved with high-reliability InGaP HBT technology. The module is fully integrated, providing a simple 50 Ohms interface on all input and output ports. It includes internal closed-loop power control. No external matching or bias components are required. Despite its very compact size, the module has exceptional efficiency in all bands. TQS 7M4014 C352 0301 A213505 Features: * Very compact size - 10x7x1.4 mm3. * High efficiency - typical GSM850 47%, GSM900 56%, DCS 51%, PCS 50%. * Positive supply voltage - 2.9 to 4.5 V. * 50 input and output impedances. * GPRS class 12 compatible. * CMOS band select and internal closed-loop power control. * High-reliability InGaP technology. * Ruggedness 10:1. * Few external components. Description: The module incorporates two highly-integrated InGaP power amplifier die with a CMOS controller. Each amplifier has three gain stages with on-die interstage matching implemented with a high Q passives technology for optimal performance. The CMOS controller implements a fully integrated closed-loop power control within the module. This eliminates the need for any external couplers, power detectors, current sensing etc., to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable and band select inputs. Excellent performance is achieved across the 824 - 849 MHz, 880 - 915 MHz, 1710 - 1785 MHz, and 1850 - 1910 MHz bands. Module construction is a low-profile overmolded land-grid array on laminate. 1.32.10 0.9.05 2.4 3.1 3.9 4.5 5.3 5.9 0.9 1.6 9.9 9.1 8.4 7.6 6.9 6.1 5.4 4.6 3.9 3.1 2.4 1.6 0.9 0.1 0,0 1.6 4.0 0.1 6.9 8.5 1.5 DCS/PCS-in Band select Tx enable V batt. V reg. V ramp Cell/GSM in 1 2 3 4 5 6 7 20 Vcc2 19 18 17 16 15 DCS/PCS-out ASIC 14 13 12 Vcc 8 Vcc2 9 10 11 Cell/GSM out Dimensions in mm Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 2 Absolute Maximum Ratings: Parameter Supply voltage DC supply current Power control voltage Duty cycle at max. power Output load Operating case temperature Storage temperature Input power Symbol Vbat Ibat Vramp VSWR Tc Ts Pin Min. -0.3 -0.3 Max. 6.0 2.4 2.2 50 10:1 85 150 11.5 Units Vdc A V % C C dBm -25 -55 Note: The amplifier will survive over the full range specified for any individual input, while other parameters are nominal and with no RF input. Operating Parameters: Parameter Supply voltage Supply current Band select voltage Tx enable input Regulator voltage Regulator current Txen Low Txen High Leakage current Txen Low, Vramp = 0.19V, BS=Low Leakage current Txen Low, Vramp = 0.19V, BS=High Txen High GSM DCS/PCS Low High Symbol Vbat Ibat Vbs-L Vbs-H Txen Vreg Ireg Il Il Min. 2.9 0 2 0 2 2.7 Typ. 3.5 1.8 Max. 4.5 0.5 3.0 0.5 Units Vdc A V V V A 2.8 10 160 1 3.0 2.9 250 10 40 A Moisture Sensitivity Levels: Required Moisture Sensitivity Level is MSL 3, 240C minimum. Moisture sensitivity classification will be conducted in accordance with JEDEC J_STD_020B. Table 5.1 of JEDEC J_STD_020B identifies the floor life for given levels of MSL classification. Floor life is defined as the time from removal of a device from dry pack until it absorbs sufficient moisture to be at risk during re-flow soldering. Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 3 Typical Performance: GSM850 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vramp = 1.6 V, Pin = 2 dBm, Duty Cycle =25%, Tc = 25C Parameter Frequency Range Input Power for Pout max. Output Power Symbol f Pin Pout Min. 824 0.0 33.0 31.0 Typ. 2.0 34.5 32.6 47 Max. 849 5.0 Units MHz dBm dBm Conditions Vbat = 2.9 V, Pin = Pin min. Tmin Tc Tmax % 1.6 50 V A dB 2.5:1 -30 -5.0 -10.0 -10.0 dBm dBm Vramp min Vramp Vramp max 0 Pout 34.5 dBm Txen = L, Pin Pin max Pout = Pout max. Power Added Efficiency Power Control Voltage Power Control Current Power Control Range Input VSWR Forward Isolation Harmonics Vramp Iramp 40 0.2 33 36 1.5:1 -45 -23 -20 Iso 2f0 3f0 > 3f0 Rx noise power: 869 - 879 MHz 879 - 894 MHz Stability -84 -85 -74.0 -82.0 8:1 dBm RBW = 100 kHz Pout > 5 dBm All phase angles Pout 34.2 dBm All phase angles Pout 34.2 dBm Ruggedness 10:1 Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 4 GSM900 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vramp = 1.6 V, Pin = 2 dBm, Duty Cycle =25%, Tc = 25C Parameter Frequency Range Input Power for Pout max. Output Power Symbol f Pin Pout Min. 880 0.0 34.5 32.0 Typ. 2.0 35.0 33.5 56 Max. 915 5.0 Units MHz dBm dBm Conditions Vbat = 2.9 V, Pin = Pin min. Tmin Tc Tmax 1.6 50 % V A dB dBm dBm dBm Pout = Pout max. Power Added Efficiency Power Control Voltage Power Control Current Power Control Range Input VSWR Forward Isolation Cross-band Isolation Harmonics Vramp Iramp 50 0.2 33 36 -45 -21 -25 -28 2.5:1 -30 -19 -5.0 -15.0 -10.0 -74.0 -82.0 8:1 Iso Iso 2f0 3f0 > 3f0 Vramp min Vramp Vramp max 0 Pout 34.5 dBm Txen = L, Pin Pin max Pin = Pin max., Vbs = Low 1710 f 1785 MHz Rx noise power: 925 - 935 MHz 935 - 960 MHz Stability -83 -84 dBm RBW = 100 kHz Pout > 5 dBm All phase angles Pout 34.2 dBm All phase angles Pout 34.2 dBm Ruggedness 10:1 Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 5 DCS1800/PCS1900 Electrical Characteristics: Test conditions (unless noted): Vbat = +3.5 V, Vramp = 1.6 V, Pin = 2 dBm, Duty Cycle = 25%, Tc = 25C Parameter Frequency Range Input Power for Pout max. Output Power 1710 - 1785 MHz Symbol f Pin Pout Min. 1710 1850 0.0 32.0 29.5 Typ. Max. 1785 1910 5.0 Units MHz dBm dBm Conditions 2.0 33.3 31.2 Vbat = 2.9 V, Pin = Pin min. Tmin Tc Tmax 1850 - 1910 MHz 31.5 29.5 45 Vramp Iramp 0.2 33 Iso 2f0 3f0 > 3f0 32.5 30.6 Vbat = 2.9 V, Pin = Pin min. Tmin Tc Tmax Power Added Efficiency 1710 - 1785 MHz 1850 - 1910 MHz Power Control Voltage Power Control Current Power Control Range Input VSWR Forward Isolation Harmonics % 51 50 1.6 50 36 2.0:1 -38 -20 -20 2.5:1 -30 -5.0 -5.0 -10.0 -77.0 8:1 dBm dBm V A dB Pout = Pout max. Tc = 25C Vramp min Vramp Vramp max 5 Pout Pout max Txen = H, Pin Pin max Rx noise power Stability -83.0 dBm RBW = 100 kHz Pin = Pin min., Pout = Pout max. All phase angles Pout 32 dBm All phase angles Pout 32 dBm Ruggedness 10:1 Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 6 Pin Out: Top view DCS/PCS-in Band select Tx enable V batt. V reg. V ramp Cell/GSM in 1 2 3 4 5 6 7 8 Vcc2 Vcc2 20 19 18 17 16 15 DCS/PCS-out ASIC 14 13 12 Vcc 9 10 11 Cell/GSM out Pin Symbol Description DCS/PCS power in Band select voltage Transmit enable Supply voltage Regulated voltage input DAC voltage input GSM850/900 power in Vcc voltage input GSM850/900 power out Vcc voltage output DCS/PCS power out Vcc voltage input RFin - DCS/PCS 1 Vbs 2 Txen 3 Vbat 4 Vreg 5 Vramp 6 RFin - Cell/GSM 7 Vcc2 8 RFout - Cell/GSM 11 Vcc 14 RFout - DCS/PCS 17 Vcc2 20 All other pins are ground Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 7 Schematic: P-in DCS /PCS Input Match Interstage Match Interstage Match ESD Output Match P-out DCS /PCS Bias Network Vbat Vramp Tx enable Vreg Vbs Bias Network ESD P-in Cell /GSM Input Match Interstage Match Interstage Match Output Match P-out Cell /GSM ASIC Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 8 Tape and Reel Information: PIN 1 position Copyright (c) 2004 TriQuint Semiconductor Inc., All rights reserved (rev. 20040517) All specifications subject to change without notice 9 |
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